Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kurşunsuz
- Lead Free
- Montaj
- Surface Mount
- Turn Off Delay Time
- 12 ns
- Radyasyon Dayanımı
- No
- Fet Feature
- Logic Level Gate
- Drain Currentmax Abs Id
- 0.15A
- Yayın Yılı
- 2013
- Rds On Max Id Vgs
- 6 Ω @ 115mA, 10V
- Terminal Sayısı
- 6
- Max Junction Temperature Tj
- 150°C
- Additional Feature
- HIGH RELIABILITY
- Yükseklik
- 1.1mm
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Kurşunsuz Kodu
- yes
- Parça Durumu
- Active
- Pin Sayısı
- 6
- Uzunluk
- 2.2mm
- Tepe Reflow Sıcaklığı (°C)
- 260
- Fet Type
- 2 N-Channel (Dual)
- RoHS Durumu
- ROHS3 Compliant
- Fabrika Tedarik Süresi
- 15 Weeks
- Drain To Source Voltage Vdss
- 60V
- Number Of Elements
- 2
- Tepe Reflow Süresi (maks. sn)
- 40
- Drain To Source Breakdown Voltage
- 60V
- Terminal Formu
- GULL WING
- JESD-609 Kodu
- e3
- Vgsth Max Id
- 2V @ 250μA
- Contact Plating
- Tin
- Temel Parça No
- DMN65D8LDW
- Pin Sayısı
- 6
- Fall Time Typ
- 6.3 ns
- Operating Mode
- ENHANCEMENT MODE
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Turn On Delay Time
- 3.3 ns
- Reach Svhc
- No SVHC
- Input Capacitance Ciss Max Vds
- 22pF @ 25V
- Direnç
- 6Ohm
- Rise Time
- 3.2ns
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