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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Dissipation
- 450mW
- Max Power Dissipation
- 450mW
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Reference Standard
- AEC-Q101
- Continuous Drain Current Id
- 260mA
- Genişlik
- 1.25mm
- Gate Charge Qg Max Vgs
- 0.87nC @ 10V
- Kılıf / Paket
- SOT-563, SOT-666
- Ambalaj
- Cut Tape (CT)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Montaj Tipi
- Surface Mount
- Gate To Source Voltage Vgs
- 20V
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Operating Mode
- ENHANCEMENT MODE
- Turn On Delay Time
- 3.3 ns
- Input Capacitance Ciss Max Vds
- 22pF @ 25V
- Reach Svhc
- No SVHC
- Rise Time
- 3.2ns
- Fall Time Typ
- 6.3 ns
- JESD-609 Kodu
- e3
- Terminal Formu
- FLAT
- Vgsth Max Id
- 1.5V @ 250μA
- Pin Sayısı
- 6
- Temel Parça No
- DMN63D8L
- Fabrika Tedarik Süresi
- 16 Weeks
- Number Of Elements
- 2
- Tepe Reflow Süresi (maks. sn)
- 30
- Drain To Source Breakdown Voltage
- 30V
- Drain To Source Voltage Vdss
- 30V
- Fet Type
- 2 N-Channel (Dual)
- RoHS Durumu
- ROHS3 Compliant
- Uzunluk
- 1.7mm
- Drainsource On Resistancemax
- 4.5Ohm
- Tepe Reflow Sıcaklığı (°C)
- 260
- Parça Durumu
- Active
- Element Configuration
- Dual
- Yükseklik
- 600μm
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
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