Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Type
- 2 N-Channel (Dual)
- RoHS Durumu
- ROHS3 Compliant
- Element Configuration
- Dual
- Parça Durumu
- Active
- Tepe Reflow Sıcaklığı (°C)
- 260
- Uzunluk
- 2.2mm
- Drainsource On Resistancemax
- 4.5Ohm
- Vgsth Max Id
- 1.5V @ 250μA
- Contact Plating
- Tin
- Temel Parça No
- DMN63D8L
- Pin Sayısı
- 6
- Terminal Formu
- GULL WING
- JESD-609 Kodu
- e3
- Fabrika Tedarik Süresi
- 15 Weeks
- Drain To Source Voltage Vdss
- 30V
- Number Of Elements
- 2
- Tepe Reflow Süresi (maks. sn)
- 40
- Drain To Source Breakdown Voltage
- 30V
- Threshold Voltage
- 1.5V
- Fet Feature
- Logic Level Gate
- Radyasyon Dayanımı
- No
- Kurşunsuz
- Lead Free
- Montaj
- Surface Mount
- Turn Off Delay Time
- 12 ns
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Kurşunsuz Kodu
- yes
- Yükseklik
- 1.1mm
- Rds On Max Id Vgs
- 2.8 Ω @ 250mA, 10V
- Terminal Sayısı
- 6
- Max Junction Temperature Tj
- 150°C
- Additional Feature
- HIGH RELIABILITY
- Yayın Yılı
- 2012
- Weight
- 6.010099mg
- Reference Standard
- AEC-Q101
- Continuous Drain Current Id
- 220mA
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Genişlik
- 1.35mm
- Gate Charge Qg Max Vgs
- 870nC @ 10V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Max Power Dissipation
- 300mW
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