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Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Pin Sayısı
- 6
- Ds Breakdown Voltagemin
- 30V
- Vgsth Max Id
- 1.5V @ 250μA
- JESD-609 Kodu
- e3
- Terminal Formu
- GULL WING
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Drain To Source Voltage Vdss
- 30V
- Tepe Reflow Süresi (maks. sn)
- 40
- Number Of Elements
- 2
- Max Power Dissipation
- 300mW
- Fabrika Tedarik Süresi
- 15 Weeks
- RoHS Durumu
- ROHS3 Compliant
- Fet Type
- 2 N-Channel (Dual)
- Continuous Drain Current Id
- 220mA
- Reference Standard
- AEC-Q101
- Parça Durumu
- Active
- Tepe Reflow Sıcaklığı (°C)
- 260
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Drainsource On Resistancemax
- 4.5Ohm
- Gate Charge Qg Max Vgs
- 870nC @ 10V
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Gate To Source Voltage Vgs
- 20V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Montaj Tipi
- Surface Mount
- Kurşunsuz Kodu
- yes
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Tape & Reel (TR)
- Additional Feature
- HIGH RELIABILITY
- Rise Time
- 3.2ns
- Reach Svhc
- No SVHC
- Input Capacitance Ciss Max Vds
- 22pF @ 25V
- Rds On Max Id Vgs
- 2.8 Ω @ 250mA, 10V
- Terminal Sayısı
- 6
- Turn On Delay Time
- 3.3 ns
- Operating Mode
- ENHANCEMENT MODE
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2012
- Drain Currentmax Abs Id
- 0.22A
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