Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- JESD-609 Kodu
- e3
- Terminal Formu
- GULL WING
- Ds Breakdown Voltagemin
- 60V
- Vgsth Max Id
- 1V @ 250μA
- Drain To Source Voltage Vdss
- 60V
- Max Power Dissipation
- 320mW
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Number Of Elements
- 2
- Fabrika Tedarik Süresi
- 16 Weeks
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Continuous Drain Current Id
- 350mA
- Reference Standard
- AEC-Q101
- RoHS Durumu
- ROHS3 Compliant
- Jesd30 Code
- R-PDSO-G6
- Power Max
- 320mW
- Fet Type
- 2 N-Channel (Dual)
- Gate Charge Qg Max Vgs
- 0.5nC @ 4.5V
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Parça Durumu
- Active
- Drainsource On Resistancemax
- 2Ohm
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Tape & Reel (TR)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Montaj Tipi
- Surface Mount
- Operating Mode
- ENHANCEMENT MODE
- Yayın Yılı
- 2015
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Additional Feature
- HIGH RELIABILITY
- Input Capacitance Ciss Max Vds
- 32pF @ 30V
- Rds On Max Id Vgs
- 2 Ω @ 100mA, 4.5V
- Terminal Sayısı
- 6
- Fet Feature
- Standard
- Terminal Kaplaması
- Matte Tin (Sn)
- Drain Currentmax Abs Id
- 0.35A
- Montaj
- Surface Mount
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