Volume pricing
- 1+ pcs$0.70
- 10+ pcs$0.66
- 100+ pcs$0.62
- 500+ pcs$0.58
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Operating Mode
- ENHANCEMENT MODE
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2015
- Terminal Sayısı
- 6
- Rds On Max Id Vgs
- 1.8 Ω @ 150mA, 5V
- Input Capacitance Ciss Max Vds
- 12.9pF @ 12V
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Tape & Reel (TR)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Montaj Tipi
- Surface Mount
- Montaj
- Surface Mount
- Fet Feature
- Logic Level Gate
- Terminal Kaplaması
- Matte Tin (Sn)
- Drain Currentmax Abs Id
- 0.63A
- Drain To Source Voltage Vdss
- 60V
- Max Power Dissipation
- 820mW
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Number Of Elements
- 2
- Fabrika Tedarik Süresi
- 17 Weeks
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- JESD-609 Kodu
- e3
- Terminal Formu
- GULL WING
- Ds Breakdown Voltagemin
- 60V
- Vgsth Max Id
- 2V @ 1mA
- Gate Charge Qg Max Vgs
- 0.74nC @ 5V
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Parça Durumu
- Active
- Drainsource On Resistancemax
- 2.4Ohm
- Kılıf / Paket
- SOT-23-6 Thin, TSOT-23-6
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Continuous Drain Current Id
- 630mA
- RoHS Durumu
- ROHS3 Compliant
- Jesd30 Code
- R-PDSO-G6
- Power Max
- 820mW
- Fet Type
- 2 N-Channel (Dual)
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