Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yayın Yılı
- 2011
- Additional Feature
- HIGH RELIABILITY
- Rds On Max Id Vgs
- 80m Ω @ 12A, 10V
- Terminal Sayısı
- 8
- Yükseklik
- 1.5mm
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Turn Off Delay Time
- 35 ns
- Montaj
- Surface Mount
- Radyasyon Dayanımı
- No
- Fet Feature
- Logic Level Gate
- Terminal Kaplaması
- Matte Tin (Sn)
- Number Of Elements
- 2
- Number Of Channels
- 2
- Tepe Reflow Süresi (maks. sn)
- 30
- Drain To Source Breakdown Voltage
- 60V
- Drain To Source Voltage Vdss
- 60V
- Fabrika Tedarik Süresi
- 23 Weeks
- Terminal Formu
- GULL WING
- JESD-609 Kodu
- e3
- Pin Sayısı
- 8
- Vgsth Max Id
- 3V @ 250μA
- Tepe Reflow Sıcaklığı (°C)
- 260
- Uzunluk
- 4.95mm
- Parça Durumu
- Active
- Element Configuration
- Dual
- RoHS Durumu
- ROHS3 Compliant
- Fet Type
- 2 N-Channel (Dual)
- Turn On Delay Time
- 3.5 ns
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Operating Mode
- ENHANCEMENT MODE
- Rise Time
- 4.1ns
- Input Capacitance Ciss Max Vds
- 588pF @ 30V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Ambalaj
- Tape & Reel (TR)
- Gate To Source Voltage Vgs
- 20V
- Montaj Tipi
- Surface Mount
- Fall Time Typ
- 11 ns
- Max Power Dissipation
- 1.5W
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