Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2016
- Operating Mode
- ENHANCEMENT MODE
- Additional Feature
- HIGH RELIABILITY
- Current Continuous Drain Id25
- 5A Ta
- Input Capacitance Ciss Max Vds
- 1287pF @ 25V
- Rds On Max Id Vgs
- 40m Ω @ 4.5A, 10V
- Terminal Sayısı
- 8
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Ambalaj
- Tape & Reel (TR)
- Montaj Tipi
- Surface Mount
- Kurşunsuz Kodu
- yes
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Montaj
- Surface Mount
- Fet Feature
- Standard
- Drain Currentmax Abs Id
- 5A
- Terminal Kaplaması
- Matte Tin (Sn)
- Max Power Dissipation
- 1.3W
- Number Of Elements
- 2
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Drain To Source Voltage Vdss
- 60V
- Fabrika Tedarik Süresi
- 18 Weeks
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Formu
- GULL WING
- JESD-609 Kodu
- e3
- Pin Sayısı
- 8
- Vgsth Max Id
- 3V @ 250μA
- Ds Breakdown Voltagemin
- 60V
- Gate Charge Qg Max Vgs
- 22.4nC @ 10V
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Drainsource On Resistancemax
- 0.04Ohm
- Parça Durumu
- Active
- Continuous Drain Current Id
- 5A
- Reference Standard
- AEC-Q101
- RoHS Durumu
- ROHS3 Compliant
- Fet Type
- 2 N-Channel (Dual)
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