Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yayın Yılı
- 2013
- Rds On Max Id Vgs
- 40m Ω @ 4.5A, 10V
- Terminal Sayısı
- 8
- Additional Feature
- HIGH RELIABILITY
- Yükseklik
- 1.5mm
- Kurşunsuz Kodu
- yes
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Turn Off Delay Time
- 20.1 ns
- Kurşunsuz
- Lead Free
- Montaj
- Surface Mount
- Fet Feature
- Logic Level Gate
- Drain Currentmax Abs Id
- 5A
- Terminal Kaplaması
- Matte Tin (Sn)
- Fabrika Tedarik Süresi
- 18 Weeks
- Number Of Channels
- 2
- Number Of Elements
- 2
- Tepe Reflow Süresi (maks. sn)
- 40
- Drain To Source Breakdown Voltage
- 60V
- Drain To Source Voltage Vdss
- 60V
- Terminal Formu
- GULL WING
- JESD-609 Kodu
- e3
- Vgsth Max Id
- 3V @ 250μA
- Pin Sayısı
- 8
- Tepe Reflow Sıcaklığı (°C)
- 260
- Drainsource On Resistancemax
- 0.04Ohm
- Uzunluk
- 4.95mm
- Element Configuration
- Dual
- Parça Durumu
- Active
- Fet Type
- 2 N-Channel (Dual)
- RoHS Durumu
- ROHS3 Compliant
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Operating Mode
- ENHANCEMENT MODE
- Turn On Delay Time
- 6.6 ns
- Input Capacitance Ciss Max Vds
- 1287pF @ 25V
- Reach Svhc
- No SVHC
- Rise Time
- 8.1ns
- Ambalaj
- Cut Tape (CT)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
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