Volume pricing
- 1+ pcs$0.19
- 10+ pcs$0.18
- 100+ pcs$0.17
- 500+ pcs$0.16
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Kurşunsuz Kodu
- yes
- Montaj Tipi
- Surface Mount
- Gate To Source Voltage Vgs
- 20V
- Yükseklik
- 600μm
- Ambalaj
- Tape & Reel (TR)
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Reach Svhc
- No SVHC
- Terminal Sayısı
- 6
- Rds On Max Id Vgs
- 2 Ω @ 50mA, 5V
- Input Capacitance Ciss Max Vds
- 50pF @ 25V
- Operating Mode
- ENHANCEMENT MODE
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2011
- Fet Feature
- Logic Level Gate
- Radyasyon Dayanımı
- No
- Montaj
- Surface Mount
- Kurşunsuz
- Lead Free
- Vgsth Max Id
- 1V @ 250μA
- Contact Plating
- Tin
- Temel Parça No
- DMN5L06VAK
- Pin Sayısı
- 6
- Terminal Formu
- FLAT
- JESD-609 Kodu
- e3
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fabrika Tedarik Süresi
- 19 Weeks
- Drain To Source Voltage Vdss
- 50V
- Max Power Dissipation
- 250mW
- Number Of Elements
- 2
- Drain To Source Breakdown Voltage
- 50V
- Tepe Reflow Süresi (maks. sn)
- 40
- Power Dissipation
- 250mW
- Weight
- 3.005049mg
- Fet Type
- 2 N-Channel (Dual)
- RoHS Durumu
- ROHS3 Compliant
- Feedback Capmax Crss
- 5 pF
- Continuous Drain Current Id
- 280mA
- Element Configuration
- Dual
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