DMN33D9LV-13

Specifications

Transistor Type

2 N-Channel

Maks. Çalışma Sıcaklığı

+ 150 C

Fabrika Paket Adedi

10000

Typical Turnoff Delay Time

18.2 ns

Id Continuous Drain Current

350 mA

Fet Feature

Standard

Rds On Max Id Vgs

2.4Ohm @ 250mA, 10V

Input Capacitance Ciss Max Vds

48pF @ 5V

Vds Drainsource Breakdown Voltage

30 V

Pd Power Dissipation

430 mW

Minimum Operating Temperature

- 55 C

Rise Time

2.6 ns

Current Continuous Drain Id25

350mA (Ta)

Ürün Tipi

MOSFET

Vgs Gatesource Voltage

- 20 V, + 20 V

Montaj Tipi

Surface Mount

Tedarikçi Cihaz Paketi

SOT-563

Qg Gate Charge

1.23 nC

Ambalaj

Reel

Vgs Th Gatesource Threshold Voltage

1.4 V

Montaj Stili

SMD/SMT

Kılıf / Paket

SOT-563, SOT-666

Configuration

Dual

Gate Charge Qg Max Vgs

1.23nC @ 10V

Technology

Si

Fet Type

2 N-Channel (Dual)

Birim Ağırlık

0.000212 oz

Power Max

430mW (Ta)

Transistor Polarity

N-Channel

Paket

Tape & Reel (TR)

Ürün Durumu

Active

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Typical Turnon Delay Time

2.9 ns

Rds On Drainsource Resistance

2.4 Ohms

Number Of Channels

2 Channel

Drain To Source Voltage Vdss

30V

Channel Mode

Enhancement

Vgsth Max Id

1.4V @ 100μA