DMN33D8LV-13

Specifications

Tepe Reflow Süresi (maks. sn)

30

Number Of Elements

2

JESD-609 Kodu

e3

Terminal Formu

FLAT

Ds Breakdown Voltagemin

30 V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Moisture Sensitivity Levels

1

Operating Temperaturemin

-55 °C

Rohs Code

Yes

REACH Uyumluluk Kodu

compliant

Drainsource On Resistancemax

3 Ω

Tepe Reflow Sıcaklığı (°C)

260

Package Style

SMALL OUTLINE

Number Of Terminals

6

Feedback Capmax Crss

8 pF

Jesd30 Code

R-PDSO-F6

Operating Mode

ENHANCEMENT MODE

Package Shape

RECTANGULAR

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Yüzey Montaj

YES

Ihs Manufacturer

DIODES INC

Terminal Pozisyonu

DUAL

Package Description

SMALL OUTLINE, R-PDSO-F6

Additional Feature

HIGH RELIABILITY

Power Dissipationmax Abs

0.43 W

Transistor Application

SWITCHING

Operating Temperaturemax

150 °C

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Polaritychannel Type

N-CHANNEL

Drain Currentmax Id

0.35 A

Part Life Cycle Code

Active

Package Body Material

PLASTIC/EPOXY

Terminal Kaplaması

MATTE TIN