DMN33D8LDW-7

Specifications

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Montaj Tipi

Surface Mount

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Additional Feature

HIGH RELIABILITY

Input Capacitance Ciss Max Vds

48pF @ 5V

Rds On Max Id Vgs

2.4 Ω @ 250mA, 10V

Terminal Sayısı

6

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2014

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Terminal Kaplaması

Matte Tin (Sn)

Drain Currentmax Abs Id

0.25A

Fet Feature

Standard

Montaj

Surface Mount

Ds Breakdown Voltagemin

30V

Vgsth Max Id

1.5V @ 100μA

Terminal Formu

GULL WING

JESD-609 Kodu

e3

Çalışma Sıcaklığı

-55°C~150°C TJ

Drain To Source Voltage Vdss

30V

Max Power Dissipation

350mW

Number Of Elements

2

Tepe Reflow Süresi (maks. sn)

30

Fabrika Tedarik Süresi

16 Weeks

Jesd30 Code

R-PDSO-G6

RoHS Durumu

ROHS3 Compliant

Power Max

350mW

Fet Type

2 N-Channel (Dual)

Continuous Drain Current Id

250mA

Reference Standard

AEC-Q101

Parça Durumu

Active

Drainsource On Resistancemax

3Ohm

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Tepe Reflow Sıcaklığı (°C)

260

Gate Charge Qg Max Vgs

1.23nC @ 10V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE