Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- Montaj
- Surface Mount
- Terminal Kaplaması
- Matte Tin (Sn)
- Drain Currentmax Abs Id
- 0.4A
- Fet Feature
- Logic Level Gate
- Reach Svhc
- No SVHC
- Input Capacitance Ciss Max Vds
- 39pF @ 3V
- Rds On Max Id Vgs
- 1.2 Ω @ 100mA, 4V
- Terminal Sayısı
- 5
- Additional Feature
- HIGH RELIABILITY
- Operating Mode
- ENHANCEMENT MODE
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2008
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Montaj Tipi
- Surface Mount
- Kurşunsuz Kodu
- yes
- Gate To Source Voltage Vgs
- 10V
- Yükseklik
- 1mm
- Ambalaj
- Tape & Reel (TR)
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Pin Sayısı
- 5
- Parça Durumu
- Active
- Uzunluk
- 2.2mm
- Tepe Reflow Sıcaklığı (°C)
- 260
- Kılıf / Paket
- 5-TSSOP, SC-70-5, SOT-353
- Genişlik
- 1.35mm
- Fet Type
- 2 N-Channel (Dual) Common Source
- RoHS Durumu
- ROHS3 Compliant
- Continuous Drain Current Id
- 400mA
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fabrika Tedarik Süresi
- 16 Weeks
- Drain To Source Voltage Vdss
- 30V
- Tepe Reflow Süresi (maks. sn)
- 40
- Number Of Channels
- 2
- Drain To Source Breakdown Voltage
- 30V
- Number Of Elements
- 2
- Max Power Dissipation
- 280mW
- Vgsth Max Id
- 1.2V @ 250μA
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