Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Turn On Delay Time
- 4.5 ns
- Operating Mode
- ENHANCEMENT MODE
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2013
- Additional Feature
- HIGH RELIABILITY
- Rise Time
- 8.9ns
- Input Capacitance Ciss Max Vds
- 87pF @ 20V
- Rds On Max Id Vgs
- 190m Ω @ 1.3A, 10V
- Terminal Sayısı
- 6
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yükseklik
- 1mm
- Ambalaj
- Tape & Reel (TR)
- Gate To Source Voltage Vgs
- 20V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Montaj Tipi
- Surface Mount
- Montaj
- Surface Mount
- Turn Off Delay Time
- 30.3 ns
- Radyasyon Dayanımı
- No
- Fet Feature
- Logic Level Gate
- Drain Currentmax Abs Id
- 1A
- Terminal Kaplaması
- Matte Tin (Sn)
- Fall Time Typ
- 15.6 ns
- Drain To Source Voltage Vdss
- 30V
- Max Power Dissipation
- 320mW
- Number Of Elements
- 2
- Tepe Reflow Süresi (maks. sn)
- 30
- Fabrika Tedarik Süresi
- 15 Weeks
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- JESD-609 Kodu
- e3
- Terminal Formu
- GULL WING
- Pin Sayısı
- 6
- Ds Breakdown Voltagemin
- 30V
- Vgsth Max Id
- 2.8V @ 250μA
- Gate Charge Qg Max Vgs
- 2nC @ 10V
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Genişlik
- 1.35mm
- Pin Sayısı
- 6
- Parça Durumu
- Active
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