Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Kurşunsuz Kodu
- yes
- Montaj Tipi
- Surface Mount
- Gate To Source Voltage Vgs
- 20V
- Ambalaj
- Tape & Reel (TR)
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Reach Svhc
- No SVHC
- Input Capacitance Ciss Max Vds
- 305pF @ 15V
- Rds On Max Id Vgs
- 60m Ω @ 3.1A, 10V
- Terminal Sayısı
- 6
- Rise Time
- 4.6ns
- Additional Feature
- HIGH RELIABILITY
- Operating Mode
- ENHANCEMENT MODE
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2012
- Turn On Delay Time
- 2.6 ns
- Fall Time Typ
- 2.5 ns
- Drain Currentmax Abs Id
- 3.3A
- Terminal Kaplaması
- Matte Tin (Sn)
- Fet Feature
- Logic Level Gate
- Radyasyon Dayanımı
- No
- Montaj
- Surface Mount
- Kurşunsuz
- Lead Free
- Turn Off Delay Time
- 13.1 ns
- Vgsth Max Id
- 2.2V @ 250μA
- Pin Sayısı
- 6
- Terminal Formu
- GULL WING
- JESD-609 Kodu
- e3
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fabrika Tedarik Süresi
- 15 Weeks
- Drain To Source Voltage Vdss
- 30V
- Max Power Dissipation
- 840mW
- Number Of Elements
- 1
- Drain To Source Breakdown Voltage
- 30V
- Number Of Channels
- 2
- Tepe Reflow Süresi (maks. sn)
- 40
- Fet Type
- 2 N-Channel (Dual)
- RoHS Durumu
- ROHS3 Compliant
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