Volume pricing
- 1+ pcs$0.22
- 10+ pcs$0.21
- 100+ pcs$0.20
- 500+ pcs$0.18
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- ECCN Kodu
- EAR99
- Current Continuous Drain Id25
- 5.5A Ta
- RoHS Durumu
- ROHS3 Compliant
- Jesd30 Code
- R-PDSO-N6
- Vgsth Max Id
- 2V @ 250μA
- Fet Feature
- Standard
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Yayın Yılı
- 2016
- Drain Currentmax Abs Id
- 5.5A
- Drainsource On Resistancemax
- 0.035Ohm
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance Ciss Max Vds
- 399pF @ 15V
- Ds Breakdown Voltagemin
- 30V
- Case Connection
- DRAIN
- Transistor Element Material
- SILICON
- Number Of Elements
- 2
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Gate Charge Qg Max Vgs
- 4.5nC @ 4.5V
- Yüzey Montaj
- YES
- Terminal Sayısı
- 6
- Fabrika Tedarik Süresi
- 14 Weeks
- Terminal Formu
- NO LEAD
- Fet Type
- 2 N-Channel (Dual)
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Rds On Max Id Vgs
- 35m Ω @ 4.8A, 10V
- Parça Durumu
- Active
- Montaj Tipi
- Surface Mount
- Kılıf / Paket
- 8-PowerVDFN
- Ambalaj
- Tape & Reel (TR)
- JESD-609 Kodu
- e4
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