Volume pricing
- 1+ pcs$0.82
- 10+ pcs$0.78
- 100+ pcs$0.73
- 500+ pcs$0.69
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Power Dissipation
- 2W
- JESD-609 Kodu
- e3
- Turn Off Delay Time
- 63 ns
- Parça Durumu
- Active
- Montaj Tipi
- Surface Mount
- Kurşunsuz
- Lead Free
- Rds On Max Id Vgs
- 20m Ω @ 6.9A, 10V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Fabrika Tedarik Süresi
- 15 Weeks
- Terminal Sayısı
- 8
- Terminal Formu
- GULL WING
- Gate Charge Qg Max Vgs
- 13nC @ 10V
- Pin Sayısı
- 8
- Continuous Drain Current Id
- 6.9A
- Pulsed Drain Currentmax Idm
- 30A
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance Ciss Max Vds
- 725pF @ 15V
- Rise Time
- 7ns
- Pin Sayısı
- 8
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fet Feature
- Logic Level Gate
- Direnç
- 22mOhm
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz Kodu
- yes
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Voltage Vdss
- 30V
- Drain To Source Breakdown Voltage
- 30V
- Ambalaj
- Tape & Reel (TR)
- Reach Svhc
- No SVHC
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Yükseklik
- 1.5mm
- Additional Feature
- HIGH RELIABILITY
- Radyasyon Dayanımı
- No
- Fet Type
- 2 N-Channel (Dual)
- Terminal Kaplaması
- Matte Tin (Sn)
- Gate To Source Voltage Vgs
- 20V
- Weight
- 850.995985mg
- Number Of Elements
- 2
- Fall Time Typ
- 30 ns
- Transistor Element Material
- SILICON
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