Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Elements
- 2
- Case Connection
- DRAIN
- Continuous Drain Current Id
- 6.2A
- Transistor Element Material
- SILICON
- Ds Breakdown Voltagemin
- 30V
- Drainsource On Resistancemax
- 0.03Ohm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance Ciss Max Vds
- 500pF @ 15V
- Fet Feature
- Standard
- Yayın Yılı
- 2015
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Vgsth Max Id
- 2V @ 250μA
- Montaj
- Surface Mount
- Drain To Source Voltage Vdss
- 30V
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- ECCN Kodu
- EAR99
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Jesd30 Code
- S-PDSO-N6
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- 6-UDFN Exposed Pad
- JESD-609 Kodu
- e4
- Max Power Dissipation
- 1W
- Ambalaj
- Tape & Reel (TR)
- Rds On Max Id Vgs
- 30m Ω @ 5.8A, 10V
- Power Max
- 1W
- Additional Feature
- HIGH RELIABILITY
- Montaj Tipi
- Surface Mount
- Parça Durumu
- Active
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Gate Charge Qg Max Vgs
- 10.6nC @ 10V
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Fet Type
- 2 N-Channel (Dual)
- Terminal Formu
- NO LEAD
- Fabrika Tedarik Süresi
- 23 Weeks
- Reference Standard
- AEC-Q101
- Terminal Sayısı
- 6
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