DMN3032LFDBQ-13

Specifications

Terminal Sayısı

6

Fabrika Tedarik Süresi

23 Weeks

Terminal Formu

NO LEAD

Fet Type

2 N-Channel (Dual)

Gate Charge Qg Max Vgs

10.6nC @ 10V

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Seri

Automotive, AEC-Q101

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Parça Durumu

Active

Montaj Tipi

Surface Mount

Additional Feature

HIGH RELIABILITY

Rds On Max Id Vgs

30m Ω @ 5.8A, 10V

Max Power Dissipation

1W

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e4

Kılıf / Paket

6-UDFN Exposed Pad

Current Continuous Drain Id25

6.2A Ta

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

S-PDSO-N6

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

30V

Montaj

Surface Mount

Vgsth Max Id

2V @ 250μA

Çalışma Sıcaklığı

-55°C~150°C TJ

Fet Feature

Standard

Input Capacitance Ciss Max Vds

500pF @ 15V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drainsource On Resistancemax

0.03Ohm

Ds Breakdown Voltagemin

30V

Transistor Element Material

SILICON

Continuous Drain Current Id

6.2A

Case Connection

DRAIN

Number Of Elements

2