Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Rise Time
- 3.3ns
- Pin Sayısı
- 8
- Input Capacitance Ciss Max Vds
- 608pF @ 15V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 7.2A
- Fall Time Typ
- 8 ns
- Number Of Elements
- 2
- Weight
- 73.992255mg
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- ECCN Kodu
- EAR99
- Tepe Reflow Süresi (maks. sn)
- 40
- Drain To Source Breakdown Voltage
- 30V
- Current Continuous Drain Id25
- 6.8A
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz Kodu
- yes
- Power Dissipation
- 2W
- Montaj
- Surface Mount
- Turn On Delay Time
- 2.9 ns
- Vgsth Max Id
- 3V @ 250μA
- Fet Feature
- Logic Level Gate
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Yayın Yılı
- 2009
- Drain Currentmax Abs Id
- 5.7A
- Rds On Max Id Vgs
- 24m Ω @ 7A, 10V
- Parça Durumu
- Active
- Montaj Tipi
- Surface Mount
- Turn Off Delay Time
- 16 ns
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Ambalaj
- Digi-Reel®
- Max Power Dissipation
- 1.8W
- JESD-609 Kodu
- e3
- Reach Svhc
- No SVHC
- Gate Charge Qg Max Vgs
- 12.9nC @ 10V
- Terminal Kaplaması
- Matte Tin (Sn)
- Gate To Source Voltage Vgs
- 20V
- Pin Sayısı
- 8
- Terminal Sayısı
- 8
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