Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drain To Source Voltage Vdss
- 20V
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- ECCN Kodu
- EAR99
- Tepe Reflow Süresi (maks. sn)
- 40
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz Kodu
- yes
- Fet Feature
- Logic Level Gate
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Yayın Yılı
- 2011
- Drain Currentmax Abs Id
- 0.33A
- Turn On Delay Time
- 4 ns
- Vgsth Max Id
- 1V @ 250μA
- Montaj
- Surface Mount
- Power Dissipation
- 350mW
- Pin Sayısı
- 6
- Drainsource On Resistancemax
- 0.99Ohm
- Rise Time
- 3.3ns
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Contact Plating
- Tin
- Input Capacitance Ciss Max Vds
- 27.6pF @ 16V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Number Of Elements
- 2
- Fall Time Typ
- 6.4 ns
- Continuous Drain Current Id
- 450mA
- Transistor Element Material
- SILICON
- Element Configuration
- Dual
- Pin Sayısı
- 6
- Gate To Source Voltage Vgs
- 8V
- Gate Charge Qg Max Vgs
- 0.5nC @ 4.5V
- Fet Type
- 2 N-Channel (Dual)
- Terminal Formu
- FLAT
- Fabrika Tedarik Süresi
- 16 Weeks
- Terminal Sayısı
- 6
- Tepe Reflow Sıcaklığı (°C)
- 260
- Radyasyon Dayanımı
- No
- Rds On Max Id Vgs
- 990m Ω @ 100mA, 4.5V
- Kurşunsuz
- Lead Free
- Additional Feature
- HIGH RELIABILITY
- Montaj Tipi
- Surface Mount
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