Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Input Capacitance Ciss Max Vds
- 389pF @ 10V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Rise Time
- 8ns
- Drainsource On Resistancemax
- 0.045Ohm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ds Breakdown Voltagemin
- 20V
- Number Of Elements
- 2
- Fall Time Typ
- 8 ns
- Case Connection
- DRAIN
- Continuous Drain Current Id
- 3.3A
- Transistor Element Material
- SILICON
- Jesd30 Code
- S-PDSO-N6
- RoHS Durumu
- ROHS3 Compliant
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- ECCN Kodu
- EAR99
- Tepe Reflow Süresi (maks. sn)
- 30
- Drain To Source Voltage Vdss
- 20V
- Montaj
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Yayın Yılı
- 2013
- Drain Currentmax Abs Id
- 4.5A
- Fet Feature
- Logic Level Gate
- Vgsth Max Id
- 1V @ 250μA
- Turn On Delay Time
- 5 ns
- Parça Durumu
- Active
- Montaj Tipi
- Surface Mount
- Additional Feature
- HIGH RELIABILITY
- Rds On Max Id Vgs
- 45m Ω @ 5A, 4.5V
- Max Power Dissipation
- 730mW
- Ambalaj
- Tape & Reel (TR)
- JESD-609 Kodu
- e4
- Turn Off Delay Time
- 25 ns
- Kılıf / Paket
- 6-UDFN Exposed Pad
- Fabrika Tedarik Süresi
- 20 Weeks
- Reference Standard
- AEC-Q101
- Terminal Sayısı
- 6
- Fet Type
- 2 N-Channel (Dual)
- Gate Charge Qg Max Vgs
- 12nC @ 10V
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
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