DMN2050LFDB-13

Specifications

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

S-PDSO-N6

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

30

Drain To Source Voltage Vdss

20V

Montaj

Surface Mount

Turn On Delay Time

5 ns

Vgsth Max Id

1V @ 250μA

Fet Feature

Logic Level Gate

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2013

Drain Currentmax Abs Id

4.5A

Input Capacitance Ciss Max Vds

389pF @ 10V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drainsource On Resistancemax

0.045Ohm

Rise Time

8ns

Ds Breakdown Voltagemin

20V

Fall Time Typ

8 ns

Case Connection

DRAIN

Continuous Drain Current Id

3.3A

Transistor Element Material

SILICON

Number Of Elements

2

Terminal Sayısı

6

Reference Standard

AEC-Q101

Fabrika Tedarik Süresi

15 Weeks

Fet Type

2 N-Channel (Dual)

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Gate Charge Qg Max Vgs

12nC @ 10V

Gate To Source Voltage Vgs

12V

Radyasyon Dayanımı

No

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

260

Parça Durumu

Active

Montaj Tipi

Surface Mount

Additional Feature

HIGH RELIABILITY

Rds On Max Id Vgs

45m Ω @ 5A, 4.5V

Ambalaj

Tape & Reel (TR)