DMN2041UVT-13

Specifications

Gate Charge Qg Max Vgs

9.1nC @ 4.5V

Technology

Si

Fet Type

2 N-Channel (Dual) Common Source

Transistor Type

2 N-Channel

Configuration

Dual

Transistor Polarity

N-Channel

Birim Ağırlık

0.000282 oz

Power Max

1.1W

Ürün Tipi

MOSFET

Vgs Gatesource Voltage

- 8 V, + 8 V

Rds On Max Id Vgs

28mOhm @ 8.2A, 4.5V

Montaj Tipi

Surface Mount

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Paket

Tape & Reel (TR)

Ambalaj

Reel

Ürün Durumu

Active

Rds On Drainsource Resistance

28 mOhms

Qg Gate Charge

9.1 nC

Channel Mode

Enhancement

Typical Turnon Delay Time

9 ns

Id Continuous Drain Current

5.8 A

Drain To Source Voltage Vdss

20V

Tedarikçi Cihaz Paketi

TSOT-26

Current Continuous Drain Id25

5.8A (Ta)

Vgs Th Gatesource Threshold Voltage

900 mV

Typical Turnoff Delay Time

32 ns

Fabrika Paket Adedi

10000

Fet Feature

Standard

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Vgsth Max Id

900mV @ 250μA

Rise Time

21 ns

Maks. Çalışma Sıcaklığı

+ 150 C

Input Capacitance Ciss Max Vds

689pF @ 10V

Vds Drainsource Breakdown Voltage

20 V

Number Of Channels

2 Channel

Pd Power Dissipation

1.1 W

Montaj Stili

SMD/SMT

Minimum Operating Temperature

- 55 C