Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- ECCN Kodu
- EAR99
- Tepe Reflow Süresi (maks. sn)
- 40
- Transistor Application
- SWITCHING
- Genişlik
- 3.1mm
- Uzunluk
- 4.5mm
- Power Dissipation
- 890mW
- Montaj
- Surface Mount
- Vgsth Max Id
- 1.2V @ 250μA
- Turn On Delay Time
- 5.2 ns
- Yayın Yılı
- 2009
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fall Time Typ
- 6.1 ns
- Transistor Element Material
- SILICON
- Number Of Elements
- 2
- Weight
- 157.991892mg
- Terminal Kaplaması
- Matte Tin (Sn)
- Gate To Source Voltage Vgs
- 12V
- Fet Type
- 2 N-Channel (Dual) Common Drain
- Radyasyon Dayanımı
- No
- Additional Feature
- LOW THERSHOLD
- Yükseklik
- 1.025mm
- Kılıf / Paket
- 8-TSSOP (0.173, 4.40mm Width)
- Ambalaj
- Tape & Reel (TR)
- Reach Svhc
- No SVHC
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Breakdown Voltage
- 20V
- Current Continuous Drain Id25
- 6.7A Ta
- Kurşunsuz Kodu
- yes
- RoHS Durumu
- ROHS3 Compliant
- Fet Feature
- Standard
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rise Time
- 13.5ns
- Pin Sayısı
- 8
- Input Capacitance Ciss Max Vds
- 570pF @ 10V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current Id
- 6.7A
- Gate Charge Qg Max Vgs
- 5.2nC @ 4.5V
- Seri
- Automotive, AEC-Q101
- Pin Sayısı
- 8
- Terminal Sayısı
- 8
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