Volume pricing
- 1+ pcs$0.54
- 10+ pcs$0.51
- 100+ pcs$0.48
- 500+ pcs$0.45
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Uzunluk
- 4.95mm
- RoHS Durumu
- ROHS3 Compliant
- Tepe Reflow Süresi (maks. sn)
- 30
- ECCN Kodu
- EAR99
- Operating Mode
- ENHANCEMENT MODE
- Transistor Application
- SWITCHING
- Drain To Source Voltage Vdss
- 20V
- Genişlik
- 3.95mm
- Montaj
- Surface Mount
- Yayın Yılı
- 2013
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fet Feature
- Logic Level Gate
- Vgsth Max Id
- 1.5V @ 250μA
- Turn On Delay Time
- 16.5 ns
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance Ciss Max Vds
- 1171pF @ 10V
- Rise Time
- 33.3ns
- Drainsource On Resistancemax
- 0.025Ohm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ds Breakdown Voltagemin
- 20V
- Number Of Elements
- 2
- Transistor Element Material
- SILICON
- Fall Time Typ
- 53.5 ns
- Continuous Drain Current Id
- 5.8A
- Fabrika Tedarik Süresi
- 23 Weeks
- Reference Standard
- AEC-Q101
- Terminal Sayısı
- 8
- Fet Type
- 2 N-Channel (Dual)
- Terminal Formu
- GULL WING
- Gate Charge Qg Max Vgs
- 18.6nC @ 8V
- Terminal Kaplaması
- Matte Tin (Sn)
- Pin Sayısı
- 8
- Gate To Source Voltage Vgs
- 8V
- Radyasyon Dayanımı
- No
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Tepe Reflow Sıcaklığı (°C)
- 260
- Parça Durumu
- Active
- Montaj Tipi
- Surface Mount
- Yükseklik
- 1.5mm
- Additional Feature
- HIGH RELIABILITY
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