Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Channels
- 2
- Input Capacitance Ciss Max Vds
- 151pF @ 10V
- Pulsed Drain Currentmax Idm
- 40A
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Drainsource On Resistancemax
- 0.036Ohm
- Rise Time
- 77ns
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Number Of Elements
- 2
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 6.8A
- Fall Time Typ
- 234 ns
- Uzunluk
- 3.05mm
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz Kodu
- yes
- Drain To Source Voltage Vdss
- 20V
- Drain To Source Breakdown Voltage
- 20V
- Genişlik
- 3.05mm
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- ECCN Kodu
- EAR99
- Tepe Reflow Süresi (maks. sn)
- 40
- Fet Feature
- Logic Level Gate
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Yayın Yılı
- 2013
- Vgsth Max Id
- 1V @ 250μA
- Turn On Delay Time
- 53 ns
- Montaj
- Surface Mount
- Yükseklik
- 800μm
- Montaj Tipi
- Surface Mount
- Parça Durumu
- Active
- Rds On Max Id Vgs
- 20m Ω @ 4A, 10V
- Reach Svhc
- No SVHC
- JESD-609 Kodu
- e3
- Max Power Dissipation
- 1.1W
- Ambalaj
- Tape & Reel (TR)
- Kılıf / Paket
- 8-PowerVDFN
- Turn Off Delay Time
- 561 ns
- Fet Type
- 2 N-Channel (Dual) Common Drain
- Fabrika Tedarik Süresi
- 16 Weeks
- Terminal Sayısı
- 8
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