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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Ds Breakdown Voltagemin
- 20V
- Continuous Drain Current Id
- 14.5A
- Transistor Element Material
- SILICON
- Number Of Elements
- 2
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drainsource On Resistancemax
- 0.0096Ohm
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance Ciss Max Vds
- 1418pF @ 10V
- Montaj
- Surface Mount
- Vgsth Max Id
- 1.5V @ 250A
- Fet Feature
- Standard
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Yayın Yılı
- 2013
- ECCN Kodu
- EAR99
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Operating Mode
- ENHANCEMENT MODE
- Transistor Application
- SWITCHING
- Drain To Source Voltage Vdss
- 20V
- RoHS Durumu
- ROHS3 Compliant
- Jesd30 Code
- R-PDSO-N6
- Kılıf / Paket
- 6-UFDFN Exposed Pad
- Max Power Dissipation
- 1W
- Ambalaj
- Tape & Reel (TR)
- JESD-609 Kodu
- e4
- Power Max
- 1W
- Rds On Max Id Vgs
- 5.4m Ω @ 5.5A, 4.5V
- Parça Durumu
- Active
- Montaj Tipi
- Surface Mount
- Configuration
- COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Gate Charge Qg Max Vgs
- 42.3nC @ 10V
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Terminal Sayısı
- 6
- Fabrika Tedarik Süresi
- 17 Weeks
- Terminal Formu
- NO LEAD
- Fet Type
- 2 N-Channel (Dual) Common Drain
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