Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- Tepe Reflow Sıcaklığı (°C)
- 260
- Fet Type
- 2 N-Channel (Dual)
- Terminal Sayısı
- 6
- Temel Parça No
- DMN2005DLP4K
- Fabrika Tedarik Süresi
- 15 Weeks
- Gate To Source Voltage Vgs
- 10V
- Pin Sayısı
- 6
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- JESD-609 Kodu
- e4
- Reach Svhc
- No SVHC
- Max Power Dissipation
- 400mW
- Ambalaj
- Tape & Reel (TR)
- Kılıf / Paket
- 6-XFDFN Exposed Pad
- Montaj Tipi
- Surface Mount
- Yükseklik
- 350μm
- Parça Durumu
- Active
- Rds On Max Id Vgs
- 1.5 Ω @ 10mA, 4V
- Kurşunsuz
- Lead Free
- Vgsth Max Id
- 900mV @ 100μA
- Yayın Yılı
- 2012
- Çalışma Sıcaklığı
- -65°C~150°C TJ
- Fet Feature
- Standard
- Power Dissipation
- 400mW
- Montaj
- Surface Mount
- Kurşunsuz Kodu
- yes
- RoHS Durumu
- ROHS3 Compliant
- Uzunluk
- 1.3mm
- Genişlik
- 1mm
- Drain To Source Breakdown Voltage
- 20V
- Drain To Source Voltage Vdss
- 20V
- Operating Mode
- ENHANCEMENT MODE
- ECCN Kodu
- EAR99
- Tepe Reflow Süresi (maks. sn)
- 40
- Terminal Pozisyonu
- BOTTOM
- Transistor Application
- SWITCHING
- Element Configuration
- Dual
- Continuous Drain Current Id
- 300mA
- Transistor Element Material
- SILICON
- Number Of Elements
- 2
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