Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Technology
- Si
- Transistor Type
- 2 N-Channel
- Fet Type
- 2 N-Channel (Dual)
- Transistor Polarity
- N Channel
- Configuration
- Dual
- Birim Ağırlık
- 0.000212 oz
- Ürün Tipi
- MOSFET
- Power Max
- 250mW (Ta)
- Rds On Max Id Vgs
- 550mOhm @ 540mA, 4.5V
- Vgs Gatesource Voltage
- - 8 V, + 8 V
- Montaj Tipi
- Surface Mount
- Kılıf / Paket
- SOT-563, SOT-666
- Rds On Drainsource Resistance
- 550 mOhms
- Paket
- Tape & Reel (TR)
- Ürün Durumu
- Active
- Ambalaj
- Cut Tape
- Id Continuous Drain Current
- 540 mA
- Typical Turnon Delay Time
- 8 ns
- Channel Mode
- Enhancement
- Msl
- MSL 1 - Unlimited
- Drain To Source Voltage Vdss
- 20V
- Current Continuous Drain Id25
- 540mA (Ta)
- Tedarikçi Cihaz Paketi
- SOT-563
- Typical Turnoff Delay Time
- 53.5 ns
- Vgs Th Gatesource Threshold Voltage
- 1 V
- Fabrika Paket Adedi
- 8000
- Vgsth Max Id
- 1V @ 250μA
- Fet Feature
- Standard
- Çalışma Sıcaklığı
- -55°C ~ 150°C (TJ)
- Rise Time
- 13.3 ns
- Maks. Çalışma Sıcaklığı
- + 150 C
- Input Capacitance Ciss Max Vds
- 150pF @ 16V
- Number Of Channels
- 2 Channel
- Channel Type
- N Channel
- Vds Drainsource Breakdown Voltage
- 20 V
- Pd Power Dissipation
- 250 W
- Continuous Drain Current Id
- 540mA
- Minimum Operating Temperature
- - 55 C
- Montaj Stili
- SMD/SMT
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