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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Montaj
- Surface Mount
- Power Dissipation
- 200mW
- Drain Currentmax Abs Id
- 0.54A
- Yayın Yılı
- 2011
- Vgsth Max Id
- 1V @ 250μA
- Turn On Delay Time
- 4.1 ns
- ECCN Kodu
- EAR99
- Tepe Reflow Süresi (maks. sn)
- 40
- Transistor Application
- SWITCHING
- Genişlik
- 1.35mm
- Qualification Status
- Not Qualified
- Uzunluk
- 2.2mm
- Number Of Elements
- 2
- Transistor Element Material
- SILICON
- Weight
- 6.010099mg
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Kaplaması
- Matte Tin (Sn)
- Gate To Source Voltage Vgs
- 8V
- Fet Type
- 2 N-Channel (Dual)
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Ambalaj
- Tape & Reel (TR)
- Reach Svhc
- No SVHC
- Akım Değeri
- 540mA
- Additional Feature
- HIGH RELIABILITY
- Yükseklik
- 1.1mm
- Max Junction Temperature Tj
- 150°C
- Direnç
- 550mOhm
- Çalışma Sıcaklığı
- -65°C~150°C TJ
- Fet Feature
- Logic Level Gate
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Breakdown Voltage
- 20V
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz Kodu
- yes
- Continuous Drain Current Id
- 540mA
- Element Configuration
- Dual
- Voltage Rated Dc
- 20V
- Threshold Voltage
- 1V
- Pin Sayısı
- 6
- Input Capacitance Ciss Max Vds
- 150pF @ 16V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
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