DMN10H220LPDW-13

Specifications

Tedarikçi Cihaz Paketi

PowerDI5060-8 (Type R)

Current Continuous Drain Id25

8A (Tc)

Typical Turnoff Delay Time

7.4 ns

Vgs Th Gatesource Threshold Voltage

2.5 V

RoHS

Details

Channel Mode

Enhancement

Id Continuous Drain Current

8 A

Typical Turnon Delay Time

6.2 ns

Drain To Source Voltage Vdss

100V

Msl

MSL 1 - Unlimited

Fabrika Paket Adedi

2500

Fet Feature

Standard

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Vgsth Max Id

2.5V @ 250μA

Input Capacitance Ciss Max Vds

384pF @ 25V

Vds Drainsource Breakdown Voltage

100 V

Channel Type

N Channel

Number Of Channels

2 Channel

Rise Time

8.7 ns

Maks. Çalışma Sıcaklığı

+ 150 C

Pd Power Dissipation

2.2 W

Montaj Stili

SMD/SMT

Continuous Drain Current Id

8A

Minimum Operating Temperature

- 55 C

Fet Type

2 N-Channel (Dual)

Transistor Type

2 N-Channel

Gate Charge Qg Max Vgs

6.7nC @ 10V

Technology

Si

Transistor Polarity

N Channel

Configuration

Dual

Birim Ağırlık

0.003422 oz

Montaj Tipi

Surface Mount, Wettable Flank

Power Max

2.2W (Ta)

Ürün Tipi

MOSFET

Rds On Max Id Vgs

222mOhm @ 2A, 10V

Vgs Gatesource Voltage

- 20 V, + 20 V

Paket

Tape & Reel (TR)

Ambalaj

Cut Tape

Ürün Durumu

Active

Rds On Drainsource Resistance

222 mOhms