Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Number Of Elements
- 2
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance Ciss Max Vds
- 2360pF @ 6V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drainsource On Resistancemax
- 0.011Ohm
- Vgsth Max Id
- 1.3V @ 1mA
- Fet Feature
- Standard
- Yayın Yılı
- 2017
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- RoHS Durumu
- ROHS3 Compliant
- Jesd30 Code
- R-PBGA-B6
- Transistor Application
- SWITCHING
- Terminal Pozisyonu
- BOTTOM
- Tepe Reflow Süresi (maks. sn)
- 30
- ECCN Kodu
- EAR99
- Operating Mode
- ENHANCEMENT MODE
- Ambalaj
- Tape & Reel (TR)
- JESD-609 Kodu
- e4
- Kılıf / Paket
- 6-SMD, No Lead
- Parça Durumu
- Active
- Montaj Tipi
- Surface Mount
- Power Max
- 2.4W
- Configuration
- COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
- Tepe Reflow Sıcaklığı (°C)
- 260
- Terminal Sayısı
- 6
- Fabrika Tedarik Süresi
- 17 Weeks
- Terminal Formu
- BALL
- Fet Type
- 2 N-Channel (Dual)
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Gate Charge Qg Max Vgs
- 35.2nC @ 4.5V
- Yüzey Montaj
- YES
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