Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- JESD-609 Kodu
- e3
- Drain Currentmax Abs Id
- 3.1A
- ECCN Kodu
- EAR99
- Input Capacitance Ciss Max Vds
- 731pF @ 20V
- Montaj
- Surface Mount
- Fabrika Tedarik Süresi
- 19 Weeks
- Ds Breakdown Voltagemin
- 60V
- Yayın Yılı
- 2016
- Terminal Formu
- GULL WING
- Transistor Element Material
- SILICON
- Montaj Tipi
- Surface Mount
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Pulsed Drain Currentmax Idm
- 15A
- Current Continuous Drain Id25
- 3.1A 2.4A
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Terminal Pozisyonu
- DUAL
- Terminal Kaplaması
- Matte Tin (Sn)
- Transistor Application
- SWITCHING
- Drainsource On Resistancemax
- 0.1Ohm
- Vgsth Max Id
- 3V @ 250μA
- Pin Sayısı
- 8
- Drain To Source Voltage Vdss
- 60V
- Ambalaj
- Tape & Reel (TR)
- Operating Mode
- ENHANCEMENT MODE
- Max Power Dissipation
- 1.6W
- Fet Feature
- Standard
- Continuous Drain Current Id
- 2.4A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- RoHS Durumu
- ROHS3 Compliant
- Terminal Sayısı
- 8
- Rds On Max Id Vgs
- 100m Ω @ 1A, 10V
- Fet Type
- 2 N and 2 P-Channel (H-Bridge)
- Configuration
- BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Parça Durumu
- Active
- Gate Charge Qg Max Vgs
- 11.5nC @ 10V
- Number Of Elements
- 4
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Kurşunsuz Kodu
- yes
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