Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Rise Time
- 4.9ns
- Terminal Pozisyonu
- DUAL
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Contact Plating
- Tin
- Genişlik
- 3.95mm
- Uzunluk
- 4.95mm
- Transistor Element Material
- SILICON
- Additional Feature
- HIGH RELIABILITY
- Turn Off Delay Time
- 28.2 ns
- Yayın Yılı
- 2013
- Input Capacitance Ciss Max Vds
- 590pF @ 15V
- ECCN Kodu
- EAR99
- Max Junction Temperature Tj
- 150°C
- Kurşunsuz Kodu
- yes
- Parça Durumu
- Active
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gate Charge Qg Max Vgs
- 11.7nC @ 10V
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Rds On Max Id Vgs
- 25m Ω @ 5A, 10V
- Fet Type
- 2 N and 2 P-Channel (H-Bridge)
- Kurşunsuz
- Lead Free
- Max Power Dissipation
- 1.5W
- Fet Feature
- Logic Level Gate
- Operating Mode
- ENHANCEMENT MODE
- Yükseklik
- 1.7mm
- Vgsth Max Id
- 2V @ 250μA
- Transistor Application
- SWITCHING
- Reference Standard
- AEC-Q101
- Pulsed Drain Currentmax Idm
- 60A
- Reach Svhc
- No SVHC
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Current Continuous Drain Id25
- 6A 4.2A
- Montaj Tipi
- Surface Mount
- Drain To Source Breakdown Voltage
- -30V
- Terminal Formu
- GULL WING
- Montaj
- Surface Mount
- Fabrika Tedarik Süresi
- 18 Weeks
- Turn On Delay Time
- 7.5 ns
- Temel Parça No
- DMHC3025LSD
- Drain Currentmax Abs Id
- 6A
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