DMGD7N45SSD-13

Specifications

Montaj Tipi

Surface Mount

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material

SILICON

Additional Feature

HIGH RELIABILITY

Terminal Formu

GULL WING

Avalanche Energy Rating Eas

56 mJ

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

2.2A

Terminal Kaplaması

Matte Tin (Sn)

Current Continuous Drain Id25

500mA Ta

Fet Technology

METAL-OXIDE SEMICONDUCTOR

ECCN Kodu

EAR99

Jesd30 Code

R-PDSO-G8

Drain Currentmax Abs Id

0.5A

JESD-609 Kodu

e3

Montaj

Surface Mount

Fabrika Tedarik Süresi

17 Weeks

Ds Breakdown Voltagemin

450V

Yayın Yılı

2014

Input Capacitance Ciss Max Vds

256pF @ 25V

Terminal Sayısı

8

Seri

Automotive, AEC-Q101

Fet Type

2 N-Channel (Dual)

Rds On Max Id Vgs

4 Ω @ 400mA, 10V

Fet Feature

Standard

Continuous Drain Current Id

500mA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Max Power Dissipation

1.64W

RoHS Durumu

ROHS3 Compliant

Gate Charge Qg Max Vgs

6.9nC @ 10V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Active

Number Of Elements

2

Vgsth Max Id

4.5V @ 1mA

Drainsource On Resistancemax

4Ohm

Ambalaj

Tape & Reel (TR)

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

450V