Volume pricing
- 1+ pcs$0.66
- 10+ pcs$0.62
- 100+ pcs$0.59
- 500+ pcs$0.55
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Rds On Max Id Vgs
- 23m Ω @ 6.5A, 4.5V
- Pin Sayısı
- 8
- Fet Type
- 2 N-Channel (Dual) Common Drain
- Terminal Sayısı
- 8
- RoHS Durumu
- ROHS3 Compliant
- Max Power Dissipation
- 1W
- Fet Feature
- Logic Level Gate
- Continuous Drain Current Id
- 5.2A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kurşunsuz Kodu
- yes
- Fall Time Typ
- 234 ns
- Tepe Reflow Sıcaklığı (°C)
- 260
- Number Of Elements
- 2
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Parça Durumu
- Active
- Gate Charge Qg Max Vgs
- 8.8nC @ 4.5V
- Tepe Reflow Süresi (maks. sn)
- 40
- Pin Sayısı
- 8
- Radyasyon Dayanımı
- No
- Vgsth Max Id
- 950mV @ 250μA
- Gate To Source Voltage Vgs
- 12V
- Drain To Source Voltage Vdss
- 20V
- Weight
- 157.991892mg
- Operating Mode
- ENHANCEMENT MODE
- Ambalaj
- Tape & Reel (TR)
- Kılıf / Paket
- 8-TSSOP (0.173, 4.40mm Width)
- Montaj Tipi
- Surface Mount
- Terminal Formu
- GULL WING
- Turn Off Delay Time
- 562 ns
- Additional Feature
- HIGH RELIABILITY
- Transistor Element Material
- SILICON
- Transistor Application
- SWITCHING
- Element Configuration
- Dual
- Rise Time
- 78ns
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Terminal Kaplaması
- Matte Tin (Sn)
- Number Of Channels
- 2
- Reach Svhc
- No SVHC
- ECCN Kodu
- EAR99
- JESD-609 Kodu
- e3
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