Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Operating Mode
- ENHANCEMENT MODE
- Yükseklik
- 1.1mm
- Vgsth Max Id
- 900mV @ 250μA
- Kurşunsuz Kodu
- yes
- Parça Durumu
- Active
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gate Charge Qg Max Vgs
- 8.8nC @ 4.5V
- Rds On Max Id Vgs
- 24m Ω @ 6.5A, 4.5V
- Pin Sayısı
- 6
- Fet Type
- 2 N-Channel (Dual) Common Drain
- Kurşunsuz
- Lead Free
- Fet Feature
- Logic Level Gate
- Max Power Dissipation
- 850mW
- Yayın Yılı
- 2009
- Input Capacitance Ciss Max Vds
- 143pF @ 10V
- Direnç
- 24mOhm
- ECCN Kodu
- EAR99
- Rise Time
- 78ns
- Element Configuration
- Dual
- Kılıf / Paket
- SOT-23-6
- Genişlik
- 1.6mm
- Uzunluk
- 3mm
- Turn Off Delay Time
- 562 ns
- Additional Feature
- HIGH RELIABILITY
- Transistor Element Material
- SILICON
- Gate To Source Voltage Vgs
- 8V
- Power Dissipation
- 850mW
- Drain To Source Voltage Vdss
- 20V
- Ambalaj
- Tape & Reel (TR)
- Tepe Reflow Süresi (maks. sn)
- 40
- Pin Sayısı
- 6
- Radyasyon Dayanımı
- No
- Fall Time Typ
- 234 ns
- Tepe Reflow Sıcaklığı (°C)
- 260
- Number Of Elements
- 2
- Terminal Sayısı
- 6
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 6.5A
- RoHS Durumu
- ROHS3 Compliant
- Montaj
- Surface Mount
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