DMG6898LSDQ-13

Specifications

Drain To Source Voltage Vdss

20V

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

40

Pin Sayısı

8

Drainsource On Resistancemax

0.016Ohm

Vgsth Max Id

1.5V @ 250μA

Kurşunsuz Kodu

yes

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Active

Gate Charge Qg Max Vgs

26nC @ 10V

Tepe Reflow Sıcaklığı (°C)

260

Number Of Elements

2

Terminal Sayısı

8

Rds On Max Id Vgs

16m Ω @ 9.4A, 4.5V

Fet Type

2 N-Channel (Dual)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

9.5A

Fet Feature

Standard

Max Power Dissipation

1.28W

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Yayın Yılı

2014

Ds Breakdown Voltagemin

20V

Fabrika Tedarik Süresi

16 Weeks

Input Capacitance Ciss Max Vds

1149pF @ 10V

ECCN Kodu

EAR99

Power Max

1.28W

JESD-609 Kodu

e3

Transistor Application

SWITCHING

Reference Standard

AEC-Q101

Pulsed Drain Currentmax Idm

30A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Kaplaması

Matte Tin (Sn)

Montaj Tipi

Surface Mount

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material

SILICON

Terminal Formu

GULL WING

Additional Feature

HIGH RELIABILITY