Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Application
- SWITCHING
- Current Continuous Drain Id25
- 3.4A 2.8A
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Terminal Kaplaması
- Matte Tin (Sn)
- Terminal Pozisyonu
- DUAL
- Number Of Channels
- 2
- Reference Standard
- AEC-Q101
- Kılıf / Paket
- SOT-23-6 Thin, TSOT-23-6
- Montaj Tipi
- Surface Mount
- Transistor Element Material
- SILICON
- Additional Feature
- HIGH RELIABILITY
- Terminal Formu
- GULL WING
- Fabrika Tedarik Süresi
- 15 Weeks
- Ds Breakdown Voltagemin
- 30V
- Yayın Yılı
- 2014
- Montaj
- Surface Mount
- Input Capacitance Ciss Max Vds
- 400pF @ 15V
- ECCN Kodu
- EAR99
- Jesd30 Code
- R-PDSO-G6
- Max Junction Temperature Tj
- 150°C
- JESD-609 Kodu
- e3
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Number Of Elements
- 2
- Parça Durumu
- Active
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Feedback Capmax Crss
- 80 pF
- Gate Charge Qg Max Vgs
- 13nC @ 10V
- Rds On Max Id Vgs
- 60m Ω @ 3.1A, 10V
- Fet Type
- N and P-Channel
- Terminal Sayısı
- 6
- RoHS Durumu
- ROHS3 Compliant
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 2.8A
- Fet Feature
- Standard
- Max Power Dissipation
- 840mW
- Gate To Source Voltage Vgs
- 20V
- Drain To Source Voltage Vdss
- 30V
- Power Dissipation
- 840mW
- Operating Mode
- ENHANCEMENT MODE
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