DMG6601LVT-7

Specifications

Temel Parça No

DMG6601

Turn On Delay Time

1.7 ns

Montaj

Surface Mount

Fabrika Tedarik Süresi

15 Weeks

JESD-609 Kodu

e3

Drain Currentmax Abs Id

3.8A

Reach Svhc

No SVHC

Reference Standard

AEC-Q101

Terminal Kaplaması

Matte Tin (Sn)

Current Continuous Drain Id25

3.8A 2.5A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Application

SWITCHING

Drain To Source Breakdown Voltage

30V

Terminal Formu

GULL WING

Montaj Tipi

Surface Mount

Ambalaj

Cut Tape (CT)

Power Dissipation

850mW

Gate To Source Voltage Vgs

12V

Drainsource On Resistancemax

0.055Ohm

Pin Sayısı

26

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

2

Tepe Reflow Sıcaklığı (°C)

260

Fall Time Typ

2.2 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

2.5A

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

6

Input Capacitance Ciss Max Vds

422pF @ 15V

Yayın Yılı

2009

Max Junction Temperature Tj

150°C

Jesd30 Code

R-PDSO-G6

ECCN Kodu

EAR99

Number Of Channels

2

Terminal Pozisyonu

DUAL

Rise Time

4.6ns

Uzunluk

2.9mm

Turn Off Delay Time

18.3 ns

Additional Feature

HIGH RELIABILITY

Transistor Element Material

SILICON