Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Pin Sayısı
- 8
- Fet Type
- 2 N-Channel (Dual)
- Rds On Max Id Vgs
- 15m Ω @ 9A, 10V
- Terminal Sayısı
- 8
- RoHS Durumu
- ROHS3 Compliant
- Max Power Dissipation
- 1.19W
- Fet Feature
- Logic Level Gate
- Continuous Drain Current Id
- 9.5A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kurşunsuz Kodu
- yes
- Number Of Elements
- 2
- Tepe Reflow Sıcaklığı (°C)
- 260
- Gate Charge Qg Max Vgs
- 42nC @ 10V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Parça Durumu
- Obsolete
- Pin Sayısı
- 8
- Tepe Reflow Süresi (maks. sn)
- 40
- Radyasyon Dayanımı
- No
- Vgsth Max Id
- 2.4V @ 250μA
- Operating Mode
- ENHANCEMENT MODE
- Ambalaj
- Cut Tape (CT)
- Power Dissipation
- 1.19W
- Drain To Source Voltage Vdss
- 30V
- Weight
- 73.992255mg
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Montaj Tipi
- Surface Mount
- Additional Feature
- HIGH RELIABILITY
- Terminal Formu
- GULL WING
- Transistor Element Material
- SILICON
- Drain To Source Breakdown Voltage
- 30V
- Transistor Application
- SWITCHING
- Terminal Kaplaması
- Matte Tin (Sn)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Pulsed Drain Currentmax Idm
- 40A
- Reach Svhc
- No SVHC
- Number Of Channels
- 1
- ECCN Kodu
- EAR99
- JESD-609 Kodu
- e3
- Yayın Yılı
- 2010
- Fabrika Tedarik Süresi
- 7 Weeks
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