Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Junction Temperature Tj
- 150°C
- ECCN Kodu
- EAR99
- Input Capacitance Ciss Max Vds
- 30pF @ 25V
- Direnç
- 4Ohm
- Yayın Yılı
- 2013
- Uzunluk
- 1.7mm
- Turn Off Delay Time
- 10.6 ns
- Additional Feature
- HIGH RELIABILITY, LOW THRESHOLD
- Transistor Element Material
- SILICON
- Kılıf / Paket
- SOT-563, SOT-666
- Genişlik
- 1.25mm
- Terminal Pozisyonu
- DUAL
- Rise Time
- 7.9ns
- Yükseklik
- 600μm
- Vgsth Max Id
- 2.5V @ 250μA
- Operating Mode
- ENHANCEMENT MODE
- Fet Feature
- Logic Level Gate
- Max Power Dissipation
- 450mW
- Rds On Max Id Vgs
- 1.7 Ω @ 500mA, 10V
- Pin Sayısı
- 6
- Fet Type
- N and P-Channel
- Kurşunsuz
- Lead Free
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Parça Durumu
- Active
- Gate Charge Qg Max Vgs
- 0.3nC @ 4.5V
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Kurşunsuz Kodu
- yes
- JESD-609 Kodu
- e3
- Drain Currentmax Abs Id
- 0.37A
- Turn On Delay Time
- 5.5 ns
- Temel Parça No
- DMG1029
- Montaj
- Surface Mount
- Fabrika Tedarik Süresi
- 16 Weeks
- Drain To Source Breakdown Voltage
- 60V
- Terminal Formu
- FLAT
- Montaj Tipi
- Surface Mount
- Reach Svhc
- No SVHC
- Current Continuous Drain Id25
- 500mA 360mA
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Terminal Kaplaması
- Matte Tin (Sn)
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