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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vgsth Max Id
- 1.8V @ 250μA
- Yükseklik
- 600μm
- Operating Mode
- ENHANCEMENT MODE
- Fet Feature
- Logic Level Gate
- Max Power Dissipation
- 580mW
- Kurşunsuz
- Lead Free
- Fet Type
- 2 N-Channel (Dual)
- Pin Sayısı
- 6
- Rds On Max Id Vgs
- 1.8 Ω @ 500mA, 10V
- Gate Charge Qg Max Vgs
- 0.45nC @ 10V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Parça Durumu
- Active
- Kurşunsuz Kodu
- yes
- ECCN Kodu
- EAR99
- Input Capacitance Ciss Max Vds
- 32pF @ 25V
- Yayın Yılı
- 2012
- Uzunluk
- 1.7mm
- Additional Feature
- HIGH RELIABILITY
- Turn Off Delay Time
- 26.4 ns
- Transistor Element Material
- SILICON
- Genişlik
- 1.25mm
- Kılıf / Paket
- SOT-563, SOT-666
- Rise Time
- 3.4ns
- Element Configuration
- Dual
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 6
- Tepe Reflow Süresi (maks. sn)
- 40
- Ambalaj
- Tape & Reel (TR)
- Drain To Source Voltage Vdss
- 60V
- Power Dissipation
- 6.5W
- Gate To Source Voltage Vgs
- 20V
- Continuous Drain Current Id
- 410mA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- RoHS Durumu
- ROHS3 Compliant
- Terminal Sayısı
- 6
- Number Of Elements
- 2
- Tepe Reflow Sıcaklığı (°C)
- 260
- Fall Time Typ
- 16.3 ns
- JESD-609 Kodu
- e3
- Drain Currentmax Abs Id
- 0.38A
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