Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Parça Durumu
- Obsolete
- JESD-609 Kodu
- e3
- Fet Feature
- Logic Level Gate
- RoHS Durumu
- ROHS3 Compliant
- Radyasyon Dayanımı
- No
- Yayın Yılı
- 2013
- Number Of Elements
- 2
- Turn Off Delay Time
- 61 ns
- Current Continuous Drain Id25
- 3.1A 2.4A
- Ambalaj
- Cut Tape (CT)
- Genişlik
- 3.05mm
- Turn On Delay Time
- 9.6 ns
- Pin Sayısı
- 8
- Montaj
- Surface Mount
- Additional Feature
- HIGH RELIABILITY
- Terminal Kaplaması
- Matte Tin (Sn)
- Terminal Sayısı
- 8
- Vgsth Max Id
- 3V @ 250μA
- ECCN Kodu
- EAR99
- Drain To Source Breakdown Voltage
- 60V
- Power Dissipation
- 1.4W
- Transistor Application
- SWITCHING
- Uzunluk
- 3.05mm
- Gate To Source Voltage Vgs
- 20V
- Fet Type
- N and P-Channel
- Gate Charge Qg Max Vgs
- 11.5nC @ 10V
- Reference Standard
- AEC-Q101
- Kılıf / Paket
- 8-WDFN
- Input Capacitance Ciss Max Vds
- 731pF @ 20V
- Rds On Max Id Vgs
- 85m Ω @ 1.5A, 10V
- Terminal Pozisyonu
- DUAL
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Max Power Dissipation
- 1.4W
- Transistor Element Material
- SILICON
- Drain Currentmax Abs Id
- 3.1A
- Continuous Drain Current Id
- 2.4A
- Operating Mode
- ENHANCEMENT MODE
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yükseklik
- 800μm
- Çalışma Sıcaklığı
- -55°C~150°C TJ
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