DMC6040SSDQ-13

Specifications

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Formu

GULL WING

Continuous Drain Current Id

5.1A

Transistor Element Material

SILICON

Max Power Dissipation

1.24W

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drain To Source Voltage Vdss

60V

Terminal Pozisyonu

DUAL

Drainsource On Resistancemax

0.04Ohm

Rds On Max Id Vgs

40m Ω @ 8A, 10V

Input Capacitance Ciss Max Vds

1130pF @ 15V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Gate Charge Qg Max Vgs

20.8nC @ 30V

Fet Type

N and P-Channel Complementary

Fabrika Tedarik Süresi

23 Weeks

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

ECCN Kodu

EAR99

Vgsth Max Id

3V @ 250μA

Terminal Sayısı

8

Terminal Kaplaması

Matte Tin (Sn)

Additional Feature

HIGH RELIABILITY

Montaj

Surface Mount

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Jesd30 Code

R-PDSO-G8

Ambalaj

Tape & Reel (TR)

Seri

Automotive, AEC-Q101

Current Continuous Drain Id25

5.1A Ta

Number Of Elements

2

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

RoHS Durumu

ROHS3 Compliant

Fet Feature

Standard

Ds Breakdown Voltagemin

60V

JESD-609 Kodu

e3

Parça Durumu

Active