Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Reference Standard
- AEC-Q101
- Input Capacitance Ciss Max Vds
- 1130pF @ 15V
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Gate To Source Voltage Vgs
- 20V
- Fet Type
- N and P-Channel
- Gate Charge Qg Max Vgs
- 20.8nC @ 10V
- Continuous Drain Current Id
- 3.1A
- Drain Currentmax Abs Id
- 5.1A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Montaj Tipi
- Surface Mount
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Terminal Formu
- GULL WING
- Drainsource On Resistancemax
- 0.04Ohm
- Drain To Source Voltage Vdss
- 60V
- Terminal Pozisyonu
- DUAL
- Rds On Max Id Vgs
- 40m Ω @ 8A, 10V
- Transistor Element Material
- SILICON
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Max Power Dissipation
- 1.24W
- Number Of Elements
- 2
- Number Of Channels
- 2
- Turn Off Delay Time
- 58.7 ns
- Tepe Reflow Sıcaklığı (°C)
- 260
- Current Continuous Drain Id25
- 5.1A 3.1A
- Ambalaj
- Tape & Reel (TR)
- Fet Feature
- Logic Level Gate
- Parça Durumu
- Active
- Fall Time Typ
- 26.1 ns
- JESD-609 Kodu
- e3
- Yayın Yılı
- 2014
- RoHS Durumu
- ROHS3 Compliant
- Weight
- 73.992255mg
- Tepe Reflow Süresi (maks. sn)
- 30
- Fabrika Tedarik Süresi
- 23 Weeks
- Transistor Application
- SWITCHING
- Rise Time
- 6.3ns
- Turn On Delay Time
- 3.7 ns
- Pin Sayısı
- 8
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