DMC4040SSDQ-13

Specifications

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material

SILICON

Rds On Max Id Vgs

25m Ω @ 3A, 10V

Drainsource On Resistancemax

0.04Ohm

Drain To Source Voltage Vdss

40V

Terminal Pozisyonu

DUAL

Terminal Formu

GULL WING

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Drain Currentmax Abs Id

5.7A

Fet Type

N and P-Channel Complementary

Gate Charge Qg Max Vgs

16nC @ 4.5V

Power Max

17.2W

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Input Capacitance Ciss Max Vds

1790pF @ 20V

Additional Feature

HIGH RELIABILITY

Terminal Kaplaması

Matte Tin (Sn)

Terminal Sayısı

8

Vgsth Max Id

1.8V @ 250μA

ECCN Kodu

EAR99

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Application

SWITCHING

Fabrika Tedarik Süresi

15 Weeks

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Active

Yüzey Montaj

YES

JESD-609 Kodu

e3

Fet Feature

Logic Level Gate

Ds Breakdown Voltagemin

40V

Current Continuous Drain Id25

7.5A Ta

Seri

Automotive, AEC-Q101

Ambalaj

Tape & Reel (TR)

Jesd30 Code

R-PDSO-G8

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Number Of Elements

2