DMC3400SDW-7

Specifications

Fet Type

N and P-Channel

Gate Charge Qg Max Vgs

1.4nC @ 10V

Max Junction Temperature Tj

150°C

Gate To Source Voltage Vgs

20V

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Input Capacitance Ciss Max Vds

55pF @ 15V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation

310mW

Transistor Element Material

SILICON

Rds On Max Id Vgs

400m Ω @ 590mA, 10V

Drainsource On Resistancemax

0.4Ohm

Drain To Source Voltage Vdss

30V

Terminal Pozisyonu

DUAL

Terminal Formu

GULL WING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Operating Mode

ENHANCEMENT MODE

Yükseklik

1.1mm

Çalışma Sıcaklığı

-55°C~150°C TJ

Montaj Tipi

Surface Mount

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Drain Currentmax Abs Id

0.65A

Continuous Drain Current Id

450mA

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2015

Parça Durumu

Active

JESD-609 Kodu

e3

Fet Feature

Standard

Ds Breakdown Voltagemin

30V

Current Continuous Drain Id25

650mA 450mA

Ambalaj

Tape & Reel (TR)

Jesd30 Code

R-PDSO-G6

Tepe Reflow Sıcaklığı (°C)

260

Number Of Elements

2

Number Of Channels

2

Terminal Kaplaması

Matte Tin (Sn)

Terminal Sayısı

6

Vgsth Max Id

1.6V @ 250μA

ECCN Kodu

EAR99

Montaj

Surface Mount

Tepe Reflow Süresi (maks. sn)

30